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US Patent Issued to Diodes on July 14 for "Power MOSFET with gate-source ESD diode structure" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,828, issued on July 14, was assigned to Diodes Inc. (Plano, Texas). "Power MOSFET with gate-source ESD diode structure" was invented by Wan... Read More


US Patent Issued to DENSO, TOYOTA JIDOSHA, MIRISE Technologies on July 14 for "Field effect transistor" (Japanese Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,829, issued on July 14, was assigned to DENSO Corp. (Kariya-city, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan) and MIRISE Technologies Corp. ... Read More


US Patent Issued to Fujian Jinhua Integrated Circuit on July 14 for "Semiconductor structure, method of forming the semiconductor structure, and semiconductor device" (Chinese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,830, issued on July 14, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China). "Semiconductor structure, method ... Read More


US Patent Issued to UNITED MICROELECTRONICS on July 14 for "Semiconductor device having a gate on a fin-shaped structure and multi-layer single diffusion break (SDB) features" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,831, issued on July 14, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Semiconductor device having a gate on a fin... Read More


US Patent Issued to Intel on July 14 for "Epi barrier aligned backside contact" (Oregon Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,832, issued on July 14, was assigned to Intel Corp. (Santa Clara, Calif.). "Epi barrier aligned backside contact" was invented by Leonard P... Read More


US Patent Issued to SAMSUNG ELECTRONICS on July 14 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,833, issued on July 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Ho Jin... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on July 14 for "Complementary field effect transistor with conductive through substrate layer" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,834, issued on July 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Complementary field effect transist... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 14 for "Structure and formation method of semiconductor device with conductive contact" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,835, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Structure and formation method ... Read More


US Patent Issued to Socionext on July 14 for "Semiconductor integrated circuit device" (Japanese Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,836, issued on July 14, was assigned to Socionext Inc. (Kanagawa, Japan). "Semiconductor integrated circuit device" was invented by Junji I... Read More


US Patent Issued to GlobalFoundries U.S. on July 14 for "Structure and related method for source/drain terminal within subcollector" (American, Indian Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,838, issued on July 14, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.). "Structure and related method for source/drain terminal wi... Read More